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NRND = Not Recommended for New Design
Description
AI
This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive.
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NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-SOIC | 3.9 mm | 0.154 in | 100 V | Surface Mount | MOSFET (Metal Oxide) | 1.8 W | 9.2 nC | 230 mOhm | N and P-Channel | -55 °C | 150 °C | 8-SO | 2.4 V | 497 pF 717 pF | Logic Level Gate | 2 A |