IC DRAM 256MBIT PARALLEL 60FBGA
| Part | Write Cycle Time - Word, Page | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Memory Organization | Supplier Device Package | Memory Size | Technology | Package / Case | Memory Type | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Memory Interface | Clock Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 14 ns | 3.6 V | 3 V | Surface Mount | 32 M | 60-FBGA (8x16) | 256 Gbit | SDRAM | 60-FBGA | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz |
Micron Technology Inc. | 12 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 167 MHz | |
Micron Technology Inc. | 15 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz | |
Micron Technology Inc. | 14 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz | |
Micron Technology Inc. | 15 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz | |
Micron Technology Inc. | 14 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz | |
Micron Technology Inc. | 14 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 133 MHz | |
Micron Technology Inc. | 12 ns | 3.6 V | 3 V | Surface Mount | 32 M | 60-FBGA (8x16) | 256 Gbit | SDRAM | 60-FBGA | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 167 MHz |
Micron Technology Inc. | 12 ns | 3.6 V | 3 V | Surface Mount | 32 M | 54-TSOP II | 256 Gbit | SDRAM | Volatile | DRAM | 70 °C | 0 °C | 5.4 ns | Parallel | 167 MHz |