N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Technology | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 17.1 nC | 50 mOhm | 4.5 V 10 V | 827 pF | -55 °C | 150 °C | 20 V | N-Channel | MOSFET (Metal Oxide) | TO-252-3 | 2.15 W | 7.2 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 40 V | 1 V |