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DIODE MODULE GP 600V 250A 3TOWER
| Part | Current - Reverse Leakage @ Vr | Technology | Diode Configuration | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Package / Case | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 15 µA | Standard | 1 Pair Common Cathode | 600 V | 250 A | Three Tower | Three Tower | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | 1.2 V | Chassis Mount |