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20V N-CHANNEL ENHANCEMENT MODE M
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Configuration | Current - Continuous Drain (Id) @ 25°C | FET Feature | FET Feature | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 67 pF | 900 mV | MOSFET (Metal Oxide) | SOT-363 | -55 °C | 150 °C | 20 V | Surface Mount | 2 N-Channel (Dual) | 500 mA | 1.2 V | Logic Level Gate | 400 mOhm | 350 mW | 6-TSSOP SC-88 SOT-363 | 1.4 nC |