1N5821 Series

Schottky Barrier Rectifier, 3.0 A, 30 V

Catalog

Schottky Barrier Rectifier, 3.0 A, 30 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor 1N5821RLG	30 V	Through Hole	Schottky	Axial	2 mA	3 A	125 °C	-65 C	Axial DO-201AA DO-27	200 mA 500 ns	500 mV

Catalog

Schottky Barrier Rectifier, 3.0 A, 30 V

Key Features

• Extremely Low vF

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier ConductionMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds

• Shipped in plastic bags, 5,000 per bag

• Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number

• Polarity: Cathode indicated by Polarity Band

• Marking: 1N5820, 1N5821, 1N5822

• Pb-Free Packages are Available

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.