UCC21756-Q1 Series

Automotive, ±10-A isolated single-channel gate driver with active protection and iso

Catalog

Automotive, ±10-A isolated single-channel gate driver with active protection and iso

Part	Voltage - Isolation	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Propagation Delay tpLH / tpHL (Max) [Max]	Pulse Width Distortion (Max) [Max]	Package / Case [x]	Package / Case	Package / Case [y]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Approval Agency	Grade	Technology	Supplier Device Package	Qualification	Common Mode Transient Immunity (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Channels	Current - Peak Output	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
Texas Instruments UCC21756QDWRQ1	5700 Vrms	10 A	10 A	130 ns	30 ns	0.295 in	16-SOIC	7.5 mm	33 V	13 V	UL VDE	Automotive	Capacitive Coupling	16-SOIC	AEC-Q100	150 kV/µs	27 ns	33 ns	1	10 A	125 °C	-40 °C	Surface Mount

Catalog

Automotive, ±10-A isolated single-channel gate driver with active protection and iso

Key Features

• 5.7kVRMS single-channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI200ns response time fast DESAT protection with 5V threshold4A internal active Miller clamp900mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC, or thermal diodeHigh voltage DC-link or phase voltageAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over- or under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C5.7kVRMS single-channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI200ns response time fast DESAT protection with 5V threshold4A internal active Miller clamp900mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC, or thermal diodeHigh voltage DC-link or phase voltageAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over- or under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C

Description

The UCC21756-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21756-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. The UCC21756-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21756-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.