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IC NVSRAM 16MBIT PARALLEL 36EDIP

PartPackage / CasePackage / CaseMemory FormatMemory OrganizationMemory SizeTechnologyWrite Cycle Time - Word, PageOperating Temperature [Max]Operating Temperature [Min]Mounting TypeMemory InterfaceSupplier Device PackageAccess TimeVoltage - Supply [Max]Voltage - Supply [Min]Memory TypeWrite Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]
Analog Devices Inc./Maxim Integrated
DS1270W-150#
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
150 ns
70 °C
0 °C
Through Hole
Parallel
36-EDIP
150 ns
3.6 V
3 V
Non-Volatile
Analog Devices Inc./Maxim Integrated
DS1270W-100IND
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
85 °C
-40 °C
Through Hole
Parallel
36-EDIP
100 ns
3.6 V
3 V
Non-Volatile
100 ns
100 ns
Analog Devices Inc./Maxim Integrated
DS1270W-150
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
150 ns
70 °C
0 °C
Through Hole
Parallel
36-EDIP
150 ns
3.6 V
3 V
Non-Volatile
Analog Devices Inc./Maxim Integrated
DS1270W-100#
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
70 °C
0 °C
Through Hole
Parallel
36-EDIP
100 ns
3.6 V
3 V
Non-Volatile
100 ns
100 ns
Analog Devices Inc./Maxim Integrated
DS1270W-100IND#
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
85 °C
-40 °C
Through Hole
Parallel
36-EDIP
100 ns
3.6 V
3 V
Non-Volatile
100 ns
100 ns
Analog Devices Inc./Maxim Integrated
DS1270W-100
36-DIP Module
0.61 "
15.49 mm
NVSRAM
2 M
16 Mb
NVSRAM (Non-Volatile SRAM)
70 °C
0 °C
Through Hole
Parallel
36-EDIP
100 ns
3.6 V
3 V
Non-Volatile
100 ns
100 ns