UCC21710-Q1 Series

Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC

Catalog

Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC

Part	Common Mode Transient Immunity (Min) [Min]	Supplier Device Package	Mounting Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Current - Peak Output	Voltage - Isolation	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Number of Channels	Propagation Delay tpLH / tpHL (Max) [Max]	Package / Case [x]	Package / Case	Package / Case [y]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Approval Agency	Pulse Width Distortion (Max) [Max]	Qualification	Grade	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Rise / Fall Time (Typ) [Max]	Rise / Fall Time (Typ)
Texas Instruments UCC21710DWR	150 kV/µs	16-SOIC	Surface Mount	Capacitive Coupling	125 °C	-40 °C	10 A	10 A	10 A	5700 Vrms	33 V	13 V	1	130 ns	0.295 in	16-SOIC	7.5 mm	27 ns	33 ns	UL VDE	30 ns
Texas Instruments UCC21710DW	150 kV/µs	16-SOIC	Surface Mount	Capacitive Coupling	125 °C	-40 °C	10 A	10 A	10 A	5700 Vrms	33 V	13 V	1	130 ns	0.295 in	16-SOIC	7.5 mm	27 ns	33 ns	UL VDE	30 ns	AEC-Q100	Automotive
Texas Instruments UCC21710QDWRQ1	150 kV/µs	16-SOIC	Surface Mount	Capacitive Coupling	125 °C	-40 °C	10 A	10 A	10 A	5700 Vrms	33 V	13 V	1	130 ns	0.295 in	16-SOIC	7.5 mm	27 ns	33 ns	UL VDE	30 ns	AEC-Q100	Automotive
Texas Instruments UCC21710QDWQ1	150 kV/µs	16-SOIC	Surface Mount	Capacitive Coupling	125 °C	-40 °C	10 A	10 A	10 A	5700 Vrms	33 V	13 V	1		0.295 in	16-SOIC	7.5 mm			UL VDE	25 ns	AEC-Q100	Automotive	90 ns	90 ns	24 ns	28 ns

Catalog

Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC

Key Features

• 5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active miller clamp400mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)UL 1577 component recognition program5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active miller clamp400mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)UL 1577 component recognition program

Description

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI). The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost. The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI). The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.