SMMBD770 Series

200 mA, 70 V, Schottky Diode

Catalog

200 mA, 70 V, Schottky Diode

Part	Capacitance @ Vr, F	Diode Type	Voltage - Peak Reverse (Max)	Package / Case	Current - Max [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Grade
ON Semiconductor MMBD770T1G	1 pF	Schottky - Single	70 V	SC-70 SOT-323	200 mA	120 mW	125 ¯C	-55 °C
ON Semiconductor SMMBD770T1G	1 pF	Schottky - Single	70 V	SC-70 SOT-323	200 mA	120 mW	125 ¯C	-55 °C	Automotive

Catalog

200 mA, 70 V, Schottky Diode

Key Features

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

Description

The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications. The Schottky diode is housed in the SOT-323/SC-70 package, which is designed for low-power surface mount applications.