DIODE SIL CARB 1.2KV 20A TO247-2
| Part | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Package / Case | Mounting Type | Current - Reverse Leakage @ Vr | Technology | Speed | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 968 pF | 175 ░C | -55 C | TO-247-2 | 0 ns | 2 V | TO-247-2 | Through Hole | 200 µA | SiC (Silicon Carbide) Schottky | No Recovery Time | 1.2 kV |