DIODE GEN PURP 600V 3A DO214AB
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Supplier Device Package | Package / Case | Technology | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Qualification | Supplier Device Package | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 600 V | 150 °C | -55 °C | 1.7 V | 30 pF | 3 A | 35 ns | DO-214AB (SMC) | DO-214AB SMC | Standard | 10 µA | 200 mA 500 ns | Surface Mount | |||
Taiwan Semiconductor Corporation | 600 V | 150 °C | -55 °C | 30 pF | 3 A | 35 ns | DO-214AB (SMC) | DO-214AB SMC | Standard | 10 µA | 200 mA 500 ns | Surface Mount | ||||
Taiwan Semiconductor Corporation | 600 V | 150 °C | -55 °C | 1.45 V | 34 pF | 3 A | 35 ns | DO-214AA | DO-214AA SMB | Standard | 10 µA | 200 mA 500 ns | Surface Mount | AEC-Q101 | SMB | Automotive |