IC FLASH 32MBIT SPI/QUAD 8SOP
| Part | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Size | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Clock Frequency | Technology | Memory Type | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 4M x 8 | 105 °C | -40 °C | SPI - Quad I/O | 32 Gbit | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 50 µs | 2.4 ms | 8-SOP | FLASH | 2.7 V | 3.6 V | 120 MHz | FLASH - NOR | Non-Volatile | |
GigaDevice Semiconductor (HK) Limited | 4M x 8 | 125 °C | -40 °C | SPI - Quad I/O | 32 Gbit | Surface Mount | 8-UDFN Exposed Pad | 140 µs | 4 ms | 8-USON (3x4) | FLASH | 2.7 V | 3.6 V | 133 MHz | FLASH - NOR (SLC) | Non-Volatile | 7 ns | ||
GigaDevice Semiconductor (HK) Limited | 4M x 8 | 85 °C | -40 °C | SPI - Quad I/O | 32 Gbit | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 50 µs | 2.4 ms | 8-SOP | FLASH | 2.7 V | 3.6 V | 120 MHz | FLASH - NOR | Non-Volatile | |
GigaDevice Semiconductor (HK) Limited | 4M x 8 | 105 °C | -40 °C | SPI - Quad I/O | 32 Gbit | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 140 µs | 4 ms | 8-SOP | FLASH | 2.7 V | 3.6 V | 133 MHz | FLASH - NOR (SLC) | Non-Volatile | 7 ns |
GigaDevice Semiconductor (HK) Limited | 4M x 8 | 105 °C | -40 °C | SPI - Quad I/O | 32 Gbit | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 50 µs | 2.4 ms | 8-SOP | FLASH | 2.7 V | 3.6 V | 120 MHz | FLASH - NOR | Non-Volatile |