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THE 2ED2109S06F IS A 650 V 0.7 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE
| Part | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Channel Type | Number of Drivers | Package / Case | Package / Case [y] | Package / Case [x] | Input Type | Supplier Device Package | Driven Configuration | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.1 V | 1.7 V | 35 ns | 100 ns | 650 V | -40 °C | 125 °C | 20 V | 10 VDC | 700 mA | 290 mA | IGBT N-Channel MOSFET | Synchronous | 1 | 8-SOIC | 3.9 mm | 0.154 in | Non-Inverting | PG-DSO-8-53 | Half-Bridge | Surface Mount |