MOSFET 2N-CH 20V 7.6A 8SOIC
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | FET Feature | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 1.1 V | 23 mOhm | 630 pF | 2 N-Channel (Dual) | -55 °C | 150 °C | 2 W | 7.6 A | 8-SOIC | Surface Mount | Logic Level Gate | MOSFET (Metal Oxide) | 12.5 nC | 8-SOIC | 3.9 mm | 0.154 in | 20 V |
Alpha & Omega Semiconductor Inc. | 1.1 V | 23 mOhm | 630 pF | 2 N-Channel (Dual) | -55 °C | 150 °C | 2 W | 7.6 A | 8-SOIC | Surface Mount | Logic Level Gate | MOSFET (Metal Oxide) | 12.5 nC | 8-SOIC | 3.9 mm | 0.154 in | 20 V |