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MOSFET N-CH 800V 17A TO220SIS
| Part | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Vgs (Max) | Mounting Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220SIS | MOSFET (Metal Oxide) | 2050 pF | 17 A | 32 nC | N-Channel | TO-220-3 Full Pack | 20 V | Through Hole | 150 °C | 10 V | 800 V | 4 V | 290 mOhm | 45 W |