MOSFET P-CH 100V 2.8A DPAK
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 2.5 W 20 W | 100 V | -55 °C | 150 °C | 4 V | 30 V | P-Channel | 1.2 Ohm | 10 nC | MOSFET (Metal Oxide) | TO-252AA | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.8 A | 10 V |
ON Semiconductor | 2.5 W 20 W | 100 V | -55 °C | 150 °C | 4 V | 30 V | P-Channel | 1.2 Ohm | 10 nC | MOSFET (Metal Oxide) | TO-252 (DPAK) | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.8 A | 10 V |