DIODE MODULE GP 100V 150A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If | Package / Case | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Speed | Diode Configuration | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.3 V | Twin Tower | Chassis Mount | 150 °C | -55 °C | Standard | 150 A | 90 ns | 200 mA 500 ns | 1 Pair Common Anode | Twin Tower | 100 V |
GeneSiC Semiconductor | 1.3 V | Twin Tower | Chassis Mount | 150 °C | -55 °C | Standard | 150 A | 90 ns | 200 mA 500 ns | 1 Pair Common Cathode | Twin Tower | 100 V |