512M, 1.8V, MOBILE DDR, 32MX16, 166MHZ, 60 BALL BGA (8MMX10MM) ROHS, T&R
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size | Access Time | Supplier Device Package | Package / Case | Memory Type | Memory Interface | Mounting Type | Memory Format | Clock Frequency | Memory Organization | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 64 MB | 5.5 ns | 60-TFBGA (8x10) | 60-TFBGA | Volatile | Parallel | Surface Mount | DRAM | 166 MHz | 32M x 16 | 15 ns |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 64 MB | 5.5 ns | 60-TFBGA (8x10) | 60-TFBGA | Volatile | Parallel | Surface Mount | DRAM | 166 MHz | 32M x 16 | 12 ns |
ISSI, Integrated Silicon Solution Inc | 85 °C | -40 °C | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 64 MB | 5.5 ns | 60-TFBGA (8x10) | 60-TFBGA | Volatile | Parallel | Surface Mount | DRAM | 166 MHz | 32M x 16 | 15 ns |
ISSI, Integrated Silicon Solution Inc | 85 °C | -40 °C | SDRAM - Mobile LPDDR | 1.95 V | 1.7 V | 64 MB | 5.5 ns | 60-TFBGA (8x10) | 60-TFBGA | Volatile | Parallel | Surface Mount | DRAM | 166 MHz | 32M x 16 | 15 ns |