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MOSFET 2N-CH 30V 9.1A/16A 8DFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Technology | FET Feature | Configuration | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | Power - Max | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | 30 V | MOSFET (Metal Oxide) | Logic Level Gate | 2 N-Channel (Dual) Asymmetrical | 8-DFN (5x6) | Surface Mount | 2.4 V | 14 mOhm | 9 nC | 16 A | 9.1 A | 1.9 W 2 W | 8-PowerVDFN | 670 pF |