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MOSFET 2N-CH 30V 5.8A 8SOIC
| Part | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | FET Feature | Drain to Source Voltage (Vdss) | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation | 2 W | 25 nC | 1 V | 37 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 625 pF | MOSFET (Metal Oxide) | 8-SOIC | Logic Level Gate | 30 V | 2 N-Channel (Dual) | -55 °C | 150 °C | 5.8 A |