IC RAM 1MBIT PARALLEL 44TSOP2
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Size | Write Cycle Time - Word, Page | Technology | Package / Case | Package / Case | Package / Case | Memory Type | Supplier Device Package | Memory Organization [custom] | Memory Organization [custom] | Memory Format | Access Time | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Everspin Technologies Inc. | 105 °C | -40 °C | 3.6 V | 3 V | Parallel | 1 Mbit | 35 ns | MRAM (Magnetoresistive RAM) | 10.16 mm | 10.16 mm | 44-TSOP | Non-Volatile | 44-TSOP2 | 64 K | 16 bits | RAM | 35 ns | Surface Mount |
Everspin Technologies Inc. | 105 °C | -40 °C | 3.6 V | 3 V | Parallel | 1 Mbit | 35 ns | MRAM (Magnetoresistive RAM) | 48-LFBGA | Non-Volatile | 48-FBGA (8x8) | 64 K | 16 bits | RAM | 35 ns | Surface Mount | ||
Everspin Technologies Inc. | 70 °C | 0 °C | 3.6 V | 3 V | Parallel | 1 Mbit | 35 ns | MRAM (Magnetoresistive RAM) | 48-LFBGA | Non-Volatile | 48-FBGA (8x8) | 64 K | 16 bits | RAM | 35 ns | Surface Mount | ||
Everspin Technologies Inc. | 125 °C | -40 °C | 3.6 V | 3 V | Parallel | 1 Mbit | 35 ns | MRAM (Magnetoresistive RAM) | 10.16 mm | 10.16 mm | 44-TSOP | Non-Volatile | 44-TSOP2 | 64 K | 16 bits | RAM | 35 ns | Surface Mount |
Everspin Technologies Inc. | 105 °C | -40 °C | 3.6 V | 3 V | Parallel | 1 Mbit | 35 ns | MRAM (Magnetoresistive RAM) | 10.16 mm | 10.16 mm | 44-TSOP | Non-Volatile | 44-TSOP2 | 64 K | 16 bits | RAM | 35 ns | Surface Mount |