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MOSFET N-CH 100V 160A TO220SM
| Part | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Supplier Device Package | Power Dissipation (Max) [Max] | FET Type | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 8510 pF | Surface Mount | 175 °C | TO-220SM(W) | 375 W | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.4 mOhm | 121 nC | 20 V | 10 V | 160 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |
Toshiba Semiconductor and Storage | 10100 pF | Surface Mount | 175 °C | TO-220SM(W) | 375 W | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.4 mOhm | 122 nC | 20 V | 6 V 10 V | 160 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.5 V |