IC DRAM 1GBIT PAR 96TWBGA
| Part | Grade | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Memory Organization | Memory Size | Memory Interface | Memory Format | Clock Frequency | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Package / Case | Write Cycle Time - Word, Page | Mounting Type | Technology | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Automotive | 1.45 V | 1.283 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 933 MHz | Volatile | 95 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3L | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 800 MHz | Volatile | 105 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3L | ||
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 667 MHz | Volatile | 105 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 667 MHz | Volatile | 105 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | Automotive | 1.45 V | 1.283 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 933 MHz | Volatile | 125 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3L | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 667 MHz | Volatile | 105 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | Automotive | 1.45 V | 1.283 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 933 MHz | Volatile | 95 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3L | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | Automotive | 1.575 V | 1.425 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 800 MHz | Volatile | 115 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3 | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 667 MHz | Volatile | 95 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | Automotive | 1.45 V | 1.283 V | 20 ns | 64 M | 1 Mbit | Parallel | DRAM | 800 MHz | Volatile | 105 °C | -40 °C | 96-TWBGA (9x13) | 96-TFBGA | 15 ns | Surface Mount | SDRAM - DDR3L | AEC-Q100 |