MOSFET N-CH 600V 7A TO220-3F
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 965 pF | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | 600 V | 30 V | TO-220F | 1.1 Ohm | 7 A | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | 25 nC | 38 W | ||
Alpha & Omega Semiconductor Inc. | 962 pF | MOSFET (Metal Oxide) | 5 V | TO-220-3 Full Pack | 600 V | 30 V | TO-220F | 1.1 Ohm | 7 A | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | 24 nC | 29 W | ||
Alpha & Omega Semiconductor Inc. | 1060 pF | MOSFET (Metal Oxide) | 4.5 V | TO-220-3 Full Pack | 650 V | 30 V | TO-220F | 1.56 Ohm | 7 A | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | 23 nC | 38.5 W | ||
Alpha & Omega Semiconductor Inc. | 995 pF | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 600 V | 30 V | TO-220F | 1.45 Ohm | 7 A | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | 25 nC | 39 W |