Catalog
N-Channel MOSFET
Description
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N-Channel MOSFET
N-Channel MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | FET Type | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power - Max [Max] | Configuration | FET Feature | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 12 V | 1.1 W | 837 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SOT-23-6 | N-Channel | 55 mOhm | SOT-23-6 | -55 °C | 150 °C | 3.7 A | Surface Mount | |||||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
Diodes Inc | 12 V | 1 W | 544 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | SOT-23-3 | -55 °C | 150 °C | 3.4 A | Surface Mount | 60 mOhm | 6.6 nC | ||||||||
Diodes Inc | 12 V | 1.56 W | 1900 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | 8-SOIC | N-Channel | 20 mOhm | 8-SO | -55 °C | 150 °C | 8.3 A | Surface Mount | 3.9 mm | 0.154 in | 18.9 nC | ||||||
Diodes Inc | 12 V | 303 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | 120 mOhm | SOT-23-3 | -55 °C | 150 °C | 1.9 A | Surface Mount | 3 nC | 625 mW |