GD25Q128 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 128MBIT SPI/QUAD 8WSON

Part	Clock Frequency	Memory Organization	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Supplier Device Package	Access Time	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Technology	Package / Case	Mounting Type	Memory Size	Package / Case [x]	Package / Case [y]
GigaDevice Semiconductor (HK) Limited GD25Q128EYJGR	133 MHz	16M x 8	105 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	8-WSON (6x8)	7 ns	140 µs	4 ms	FLASH - NOR (SLC)	8-WDFN Exposed Pad	Surface Mount	128 Mb
GigaDevice Semiconductor (HK) Limited GD25Q128EYIGY	133 MHz	16M x 8	85 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	8-WSON (6x8)	7 ns	70 µs	2.4 ms	FLASH - NOR (SLC)	8-WDFN Exposed Pad	Surface Mount	128 Mb
GigaDevice Semiconductor (HK) Limited GD25Q128EFIRR	133 MHz	16M x 8	85 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	16-SOP	7 ns	70 µs	2.4 ms	FLASH - NOR (SLC)	16-SOIC	Surface Mount	128 Mb	0.295 in	7.5 mm
GigaDevice Semiconductor (HK) Limited GD25Q128EYIGR	133 MHz	16M x 8	85 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	8-WSON (6x8)	7 ns	70 µs	2.4 ms	FLASH - NOR (SLC)	8-WDFN Exposed Pad	Surface Mount	128 Mb
GigaDevice Semiconductor (HK) Limited GD25Q128EQEGR	133 MHz	16M x 8	125 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	8-USON (4x4)	7 ns	140 µs	4 ms	FLASH - NOR (SLC)	8-XDFN Exposed Pad	Surface Mount	128 Mb
GigaDevice Semiconductor (HK) Limited GD25Q128EBJRY	133 MHz	16M x 8	105 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	24-TFBGA (6x8)	7 ns	140 µs	4 ms	FLASH - NOR (SLC)	24-TBGA	Surface Mount	128 Mb
GigaDevice Semiconductor (HK) Limited GD25Q128EBIRY	133 MHz	16M x 8	85 °C	-40 °C	SPI - Quad I/O	FLASH	2.7 V	3.6 V	Non-Volatile	24-TFBGA (6x8)	7 ns	70 µs	2.4 ms	FLASH - NOR (SLC)	24-TBGA	Surface Mount	128 Mb