71124S Series

5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout

Manufacturer: Renesas Electronics Corporation

Catalog

5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout

Part	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Technology	Package / Case	Package / Case	Package / Case	Memory Format	Memory Type	Access Time	Memory Organization	Memory Size	Mounting Type
Renesas Electronics Corporation 71124S20YGI8	85 °C	-40 °C	20 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	20 ns	128K x 8	1 Mbit	Surface Mount
Renesas Electronics Corporation 71124S15YGI8	85 °C	-40 °C	15 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	15 ns	128K x 8	1 Mbit	Surface Mount
Renesas Electronics Corporation 71124S12YG	70 °C	0 °C	12 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	12 ns	128K x 8	1 Mbit	Surface Mount
Renesas Electronics Corporation 71124S15YGI	85 °C	-40 °C	15 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	15 ns	128K x 8	1 Mbit	Surface Mount
Renesas Electronics Corporation 71124S15YG8	70 °C	0 °C	15 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	15 ns	128K x 8	1 Mbit	Surface Mount
Renesas Electronics Corporation 71124S12YG8	70 °C	0 °C	12 ns	32-SOJ	4.5 V	5.5 V	Parallel	SRAM - Asynchronous	32-BSOJ	10.16 mm	10.16 mm	SRAM	Volatile	12 ns	128K x 8	1 Mbit	Surface Mount

Catalog

5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout

Description

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.