IC FLASH 1GBIT PAR 48TSOPI
| Part | Access Time | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Interface | Memory Organization | Memory Format | Memory Size | Mounting Type | Technology | Package / Case | Package / Case [y] | Package / Case [y] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 9 ns | 48-TSOP I | 85 °C | -40 °C | Non-Volatile | ONFI | 128 M | FLASH | 1 Mbit | Surface Mount | FLASH - NAND (SLC) | 48-TFSOP | 18.4 mm | 0.724 in | 12 ns | 600 µs | 2.7 V | 3.6 V | ||
GigaDevice Semiconductor (HK) Limited | 18 ns | 48-TSOP I | 85 °C | -40 °C | Non-Volatile | ONFI | 128 M | FLASH | 1 Mbit | Surface Mount | FLASH - NAND (SLC) | 48-TFSOP | 18.4 mm | 0.724 in | 2.7 V | 3.6 V | 20 ns | |||
GigaDevice Semiconductor (HK) Limited | 20 ns | 63-FBGA (9x11) | 85 °C | -40 °C | Non-Volatile | Parallel | 128 M | FLASH | 1 Mbit | Surface Mount | FLASH - NAND (SLC) | 63-VFBGA | 2.7 V | 3.6 V | 25 ns | |||||
GigaDevice Semiconductor (HK) Limited | 48-TSOP I | Non-Volatile | 128 M | FLASH | 1 Mbit | Surface Mount | FLASH - NAND | 48-TFSOP | 2.7 V | 3.6 V | 0.173 in 4.4 mm |