TK20N60 Series

Catalog

MOSFET N-CH 600V 20A TO247

Part	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK20N60W,S1VF	Through Hole	150 °C	1680 pF	TO-247	TO-247-3	MOSFET (Metal Oxide)	600 V	30 V	20 A	N-Channel	165 W	48 nC	10 V	3.7 V
Toshiba Semiconductor and Storage TK20N60W5,S1VF	Through Hole	150 °C	1800 pF	TO-247	TO-247-3	MOSFET (Metal Oxide)	600 V	30 V	20 A	N-Channel	165 W		10 V	4.5 V	55 nC	175 mOhm