RJ1R10BBH Series

Nch 150V 105A, TO-263AB, Power MOSFET

Catalog

Nch 150V 105A, TO-263AB, Power MOSFET

Part	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type
Rohm Semiconductor RJ1R10BBHTL1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 V	N-Channel	181 W	20 V	6 V 10 V	7750 pF	150 °C	8.2 mOhm	105 A	130 nC	MOSFET (Metal Oxide)	Surface Mount

Nch 150V 105A, TO-263AB, Power MOSFET

• Low on-resistance, High power small mold package (TO263AB), Pb-free plating ; RoHS compliant, 100% Rg and UIS tested, Halogen free

RJ1R10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.