DIODE MODULE GP 100V 150A 3TOWER
| Part | Technology | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Mounting Type | Speed | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | Three Tower | 100 V | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 50 V | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 50 V | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 200 V | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 100 V | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 200 V | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.3 V | |
GeneSiC Semiconductor | Standard | Three Tower | 400 V | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 150 A | 150 °C | -55 °C | Three Tower | 1.35 V | 150 ns |