Beta
⌘K
DIODE GEN PURP 200V 3A DO201AD
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Package / Case | Technology | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 175 ░C | -65 C | 3 A | 3 çs | 40 pF | DO-201AD | 1 V | Standard Recovery >500ns | 200 mA | DO-201AD Axial | Standard | Through Hole | 200 V | 5 µA |
Vishay General Semiconductor - Diodes Division | 175 ░C | -55 C | 3 A | 7.5 µs | 60 pF | SOD-64 | 1 V | Standard Recovery >500ns | 200 mA | Axial SOD-64 | Avalanche | Through Hole | 200 V | 1 µA |
Vishay General Semiconductor - Diodes Division | 175 ░C | -65 C | 3 A | 3 çs | 40 pF | DO-201AD | 1 V | Standard Recovery >500ns | 200 mA | DO-201AD Axial | Standard | Through Hole | 200 V | 5 µA |