MOSFET N-CH 500V 4.8A TO252
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-252AA | 500 V | -55 °C | 150 °C | 10 V | 12.6 nC | 1.4 Ohm | N-Channel | 30 V | 620 pF | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5.5 V | MOSFET (Metal Oxide) | |||
IXYS | TO-252AA | 85 V | -55 °C | 175 ░C | 10 V | 23 mOhm | N-Channel | 20 V | 1460 pF | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | MOSFET (Metal Oxide) | 130 W | 34 nC | 50 A |