IXTY1 Series

Manufacturer: IXYS

Catalog

MOSFET N-CH 600V 1.4A TO252

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXTY1R4N60P TRL	50 W	5.2 nC	MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	9 Ohm	1.4 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	600 V
IXYS IXTY1R6N50P			MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	6.5 Ohm	1.6 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	500 V	43 W	3.9 nC
IXYS IXTY1R4N60P	50 W	5.2 nC	MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	9 Ohm	1.4 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	600 V