MOSFET N-CH 8SOIC
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package [y] | Supplier Device Package [x] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | ||||||||||||||||||
Alpha & Omega Semiconductor Inc. | 4.3 mOhm | -55 °C | 150 °C | Surface Mount | 20 A 40 A | 3.1 W 36 W | MOSFET (Metal Oxide) | 8-DFN-EP (3x3) | 20 V | 50 nC | 30 V | 4.5 V 10 V | 8-PowerVDFN | 2.4 V | N-Channel | |||
Alpha & Omega Semiconductor Inc. | 2.8 mOhm | -55 °C | 150 °C | Surface Mount | 34 A 50 A | 6.2 W 83 W | MOSFET (Metal Oxide) | 8-DFN-EP | 20 V | 60 nC | 30 V | 4.5 V 10 V | 8-PowerWDFN | 2.3 V | N-Channel | 3.3 | 3.3 | 3120 pF |