MBRTA800 Series

Catalog

DIODE MOD SCHOT 100V 400A 3TOWER

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Package / Case
GeneSiC Semiconductor MBRTA800100R	1 mA	100 V	200 mA 500 ns	Schottky	150 °C	-55 °C	840 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Anode	Three Tower
GeneSiC Semiconductor MBRTA80045RL	6 mA	45 V	200 mA 500 ns	Schottky	150 °C	-55 °C	600 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Anode	Three Tower
GeneSiC Semiconductor MBRTA80045	1 mA	45 V	200 mA 500 ns	Schottky	150 °C	-55 °C	720 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower
GeneSiC Semiconductor MBRTA80035	1 mA	35 V	200 mA 500 ns	Schottky	150 °C	-55 °C	720 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower
GeneSiC Semiconductor MBRTA80020RL	3 mA	20 V	200 mA 500 ns	Schottky	150 °C	-55 °C	580 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Anode	Three Tower
GeneSiC Semiconductor MBRTA800100	1 mA	100 V	200 mA 500 ns	Schottky	150 °C	-55 °C	840 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower
GeneSiC Semiconductor MBRTA80060	1 mA	60 V	200 mA 500 ns	Schottky	150 °C	-55 °C	780 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower
GeneSiC Semiconductor MBRTA80045R	1 mA	45 V	200 mA 500 ns	Schottky	150 °C	-55 °C	720 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Anode	Three Tower
GeneSiC Semiconductor MBRTA800150	5 mA		200 mA 500 ns	Schottky	150 °C	-55 °C	880 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower
GeneSiC Semiconductor MBRTA80020L	3 mA	20 V	200 mA 500 ns	Schottky	150 °C	-55 °C	580 mV	Three Tower	Chassis Mount	400 A	1 Pair Common Cathode	Three Tower