DIODE GEN PURP 800V 1A TS-1
| Part | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Mounting Type | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 15 pF | 5 µA | Through Hole | 500 ns | T-18 Axial | 150 °C | -55 °C | Standard | TS-1 | 200 mA 500 ns | 800 V | 1 A | 1.3 V |