BD2320UEFJ-LA Series

100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver

Catalog

100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Package / Case	Package / Case	Package / Case	Driven Configuration	Input Type	Gate Type	Number of Drivers	Channel Type	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package
Rohm Semiconductor BD2320UEFJ-LAE2	3.5 A	4.5 A	1.5 V 1.7 V	0.154 in	8-SOIC	3.9 mm	Half-Bridge	Non-Inverting	N-Channel MOSFET	2	Independent	Surface Mount	14.5 V	7.5 V	125 °C	-40 °C	8 ns	6 ns	100 V	8-HTSOP-J

Catalog

100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver

Key Features

• Long Time Support Product for Industrial Applications., Under Voltage Lockout (UVLO) for High-Side and Low-Side Driver, 3.3 V and 5.0 V Interface Voltage, Output In-phase with Input Signal

Description

This is the product guarantees long time support in industrial market. BD2320UEFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side.This IC uses different production line against series model BD2320EFJ-LA for the purpose of improving production efficiency. We recommend using this IC for your new development. Electric characteristics noted in Datasheet does not differ between Production Line. In addition, the data of BD2320EFJ-LA is disclosed for documents and design models unless otherwise specified.