IC NVSRAM 16KBIT PARALLEL 24EDIP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case | Package / Case | Access Time | Supplier Device Package | Technology | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Memory Type | Memory Size | Memory Interface | Memory Format | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 85 °C | -40 °C | 100 ns | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | 100 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | |
Analog Devices Inc./Maxim Integrated | 85 °C | -40 °C | 0.6 in | 24-DIP Module | 15.24 mm | 150 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 150 ns | ||
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 200 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated | 85 °C | -40 °C | 0.6 in | 24-DIP Module | 15.24 mm | 200 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 100 ns | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | 100 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.5 V | 5.5 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | |
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 100 ns | 100 ns | 0.6 in | 24-DIP Module | 15.24 mm | 100 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.5 V | 5.5 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | |
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 200 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.5 V | 5.5 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated | 85 °C | -40 °C | 0.6 in | 24-DIP Module | 15.24 mm | 200 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 150 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 150 ns | ||
Analog Devices Inc./Maxim Integrated | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 120 ns | 24-EDIP | NVSRAM (Non-Volatile SRAM) | Through Hole | 4.75 V | 5.25 V | 2K x 8 | Non-Volatile | 16 Kbit | Parallel | NVSRAM | 120 ns |