GD25LQ32 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 32MBIT SPI/QUAD 8USON

Part	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Size	Supplier Device Package	Memory Organization	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Memory Format	Mounting Type	Package / Case	Access Time	Clock Frequency	Memory Interface	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LQ32ENEGR	100 µs	4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-USON (3x4)	4M x 8	-40 °C	125 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-UDFN Exposed Pad	6 ns	133 MHz	QPI Quad I/O SPI
GigaDevice Semiconductor (HK) Limited GD25LQ32EQEGR	100 µs	4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-USON (4x4)	4M x 8	-40 °C	125 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-XDFN Exposed Pad	6 ns	133 MHz	QPI Quad I/O SPI
GigaDevice Semiconductor (HK) Limited GD25LQ32EQIGR	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-USON (4x4)	4M x 8	-40 °C	85 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-XDFN Exposed Pad	6 ns	133 MHz	QPI Quad I/O SPI
GigaDevice Semiconductor (HK) Limited GD25LQ32ESAGR	100 µs	4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-SOP	4M x 8	-40 °C	125 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-SOIC	6 ns	133 MHz	QPI Quad I/O SPI	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ32ETIGR	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-SOP	4M x 8	-40 °C	85 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-SOIC	6 ns	133 MHz	QPI Quad I/O SPI	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ32EWIGR	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-WSON (5x6)	4M x 8	-40 °C	85 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-WDFN Exposed Pad	6 ns	133 MHz	QPI Quad I/O SPI
GigaDevice Semiconductor (HK) Limited GD25LQ32ETIGY	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-SOP	4M x 8	-40 °C	85 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-SOIC	6 ns	133 MHz	QPI Quad I/O SPI	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ32EWJGR	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-WSON (5x6)	4M x 8	-40 °C	105 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-WDFN Exposed Pad	6 ns	133 MHz	QPI Quad I/O SPI
GigaDevice Semiconductor (HK) Limited GD25LQ32ESIGY	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-SOP	4M x 8	-40 °C	85 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-SOIC	6 ns	133 MHz	QPI Quad I/O SPI	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ32ESJGR	60 µs	2.4 ms	Non-Volatile	2 V	1.65 V	32 Gbit	8-SOP	4M x 8	-40 °C	105 °C	FLASH - NOR (SLC)	FLASH	Surface Mount	8-SOIC	6 ns	133 MHz	QPI Quad I/O SPI	5.3 mm	0.209 "