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MOSFET N CH 100V 52A TO220
| Part | Mounting Type | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 20 V | 72 W | 10 V | 13.8 mOhm | 52 A | TO-220 | 100 V | MOSFET (Metal Oxide) | 4 V | N-Channel | 28 nC | 1800 pF | TO-220-3 | 150 °C |