2MB,HIGH-SPEED,ASYNC,128K X 16,8NS/3.3V, OR 10NS/2.4V-3.6V,48 BALL MBGA (6X8 MM), ROHS, AUTOMOTIVE TEMP, ECC
| Part | Write Cycle Time - Word, Page | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Memory Format | Technology | Mounting Type | Package / Case | Memory Type | Memory Size | Access Time | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 10 ns | 2.4 V | 3.6 V | Parallel | 48-TFBGA (6x8) | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 48-TFBGA | Volatile | 2 Gbit | 10 ns | ||
ISSI, Integrated Silicon Solution Inc | 12 ns | 2.4 V | 3.6 V | Parallel | 44-TSOP II | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 44-TSOP | Volatile | 2 Gbit | 12 ns | 10.16 mm | 10.16 mm |
ISSI, Integrated Silicon Solution Inc | 10 ns | 2.4 V | 3.6 V | Parallel | 48-TFBGA (6x8) | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 48-TFBGA | Volatile | 2 Gbit | 10 ns | ||
ISSI, Integrated Silicon Solution Inc | 12 ns | 2.4 V | 3.6 V | Parallel | 48-TFBGA (6x8) | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 48-TFBGA | Volatile | 2 Gbit | 12 ns | ||
ISSI, Integrated Silicon Solution Inc | 12 ns | 2.4 V | 3.6 V | Parallel | 48-TFBGA (6x8) | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 48-TFBGA | Volatile | 2 Gbit | 12 ns | ||
ISSI, Integrated Silicon Solution Inc | 10 ns | 2.4 V | 3.6 V | Parallel | 44-TSOP II | -40 °C | 125 °C | SRAM | SRAM - Asynchronous | Surface Mount | 44-TSOP | Volatile | 2 Gbit | 10 ns | 10.16 mm | 10.16 mm |