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PHOTOCOUPLER TRANS OUT
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) [Max] | Voltage - Forward (Vf) (Typ) | Current - Output / Channel | Mounting Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Number of Channels | Current Transfer Ratio (Max) [Max] | Output Type | Supplier Device Package | Package / Case | Current Transfer Ratio (Min) [Min] | Current - DC Forward (If) (Max) [Max] | Current Transfer Ratio (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Surface Mount | 3 µs | 2 µs | DC | 1 | 600 % | 1.81 mOhm | 4-SMD | 4-SMD Gull Wing | 100 % | 60 mA | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Surface Mount | 3 µs | 2 µs | DC | 1 | 1.81 mOhm | 4-SMD | 4-SMD Gull Wing | 200 % | 60 mA | 400 % | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 600 % | 1.81 mOhm | 4-DIP | 4-DIP (0.300" 7.62mm) | 100 % | 60 mA | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 1.81 mOhm | 4-DIP | 4-DIP | 100 % | 60 mA | 300 % | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 600 % | 1.81 mOhm | 4-DIP | 4-DIP | 50 % | 60 mA | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 1.81 mOhm | 4-DIP | 4-DIP (0.300" 7.62mm) | 50 % | 60 mA | 150 % | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 600 % | 1.81 mOhm | 4-DIP | 4-DIP (0.300" 7.62mm) | 200 % | 60 mA | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Through Hole | 3 µs | 2 µs | DC | 1 | 1.81 mOhm | 4-DIP | 4-DIP (0.300" 7.62mm) | 150 % | 60 mA | 300 % | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Surface Mount | 3 µs | 2 µs | DC | 1 | 600 % | 1.81 mOhm | 4-SMD | 4-SMD Gull Wing | 50 % | 60 mA | |
Toshiba Semiconductor and Storage | -55 °C | 110 °C | 3 µs | 400 mV | 1.15 V | 50 mA | Surface Mount | 3 µs | 2 µs | DC | 1 | 1.81 mOhm | 4-SMD | 4-SMD Gull Wing | 100 % | 60 mA | 200 % |