DRAM CHIP MOBILE SDRAM 256M-BIT 16MX16 1.8V 54-PIN TFBGA T/R
| Part | Mounting Type | Technology | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Memory Organization | Supplier Device Package | Memory Type | Package / Case | Clock Frequency | Access Time | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x8) | Volatile | 54-TFBGA | 133 MHz | 6 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x8) | Volatile | 54-TFBGA | 166 MHz | 5.5 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x8) | Volatile | 54-TFBGA | 166 MHz | 5.5 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TSOP II | Volatile | 125 MHz | 6 ns | 1.95 V | 1.7 V | 256 Gbit | |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x8) | Volatile | 54-TFBGA | 133 MHz | 6 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x13) | Volatile | 54-TFBGA | 125 MHz | 6 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 70 °C | 0 °C | DRAM | 16 M | 54-TFBGA (8x13) | Volatile | 54-TFBGA | 125 MHz | 6 ns | 1.95 V | 1.7 V | 256 Gbit |
ISSI, Integrated Silicon Solution Inc | Surface Mount | SDRAM - Mobile | Parallel | 85 °C | -40 °C | DRAM | 16 M | 54-TFBGA (8x8) | Volatile | 54-TFBGA | 166 MHz | 5.5 ns | 1.95 V | 1.7 V | 256 Gbit |