MURTA300 Series

Catalog

DIODE MODULE GP 600V 150A 3TOWER

Part	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MURTA300120	Standard	25 µA	600 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	2.6 V	Three Tower	Chassis Mount	150 A	1 Pair Common Cathode
GeneSiC Semiconductor MURTA30020R	Standard	25 µA	200 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1 V	Three Tower	Chassis Mount	150 A	1 Pair Common Anode
GeneSiC Semiconductor MURTA30060	Standard	25 µA	600 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA		Three Tower	Chassis Mount	150 A	1 Pair Common Cathode	1.7 V
GeneSiC Semiconductor MURTA30040R	Standard	25 µA	400 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1.3 V	Three Tower	Chassis Mount	150 A	1 Pair Common Anode
GeneSiC Semiconductor MURTA30040	Standard	25 µA	400 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1.3 V	Three Tower	Chassis Mount	150 A	1 Pair Common Cathode
GeneSiC Semiconductor MURTA30020	Standard	25 µA	200 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1 V	Three Tower	Chassis Mount	150 A	1 Pair Common Cathode
GeneSiC Semiconductor MURTA30060R	Standard	25 µA	600 V	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA		Three Tower	Chassis Mount	150 A	1 Pair Common Anode	1.7 V