MOSFET N-CH 40V 65A DPAK
| Part | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DPAK+ | 20 V | 39 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 40 V | 107 W | 2.5 V | MOSFET (Metal Oxide) | 4.3 mOhm | 65 A | 175 °C | 2550 pF | 4.5 V 10 V | N-Channel |