UCC21738-Q1 Series

Automotive 10-A single-channel isolated gate driver for SiC/IGBT, active short-circuit protection

Catalog

Automotive 10-A single-channel isolated gate driver for SiC/IGBT, active short-circuit protection

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Qualification	Grade	Voltage - Isolation	Pulse Width Distortion (Max) [Max]	Current - Peak Output	Mounting Type	Common Mode Transient Immunity (Min) [Min]	Approval Agency	Number of Channels	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Supplier Device Package	Propagation Delay tpLH / tpHL (Max) [Max]	Package / Case [x]	Package / Case	Package / Case [y]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Technology
Texas Instruments UCC21738QDWRQ1	27 ns	33 ns	AEC-Q100	Automotive	5700 Vrms	30 ns	10 A	Surface Mount	150 V/µs	IEC/EN/DIN UL VDE	1	33 V	13 V	16-SOIC	130 ns	0.295 in	16-SOIC	7.5 mm	125 °C	-40 °C	120 mA	120 mA	Capacitive Coupling

Catalog

Automotive 10-A single-channel isolated gate driver for SiC/IGBT, active short-circuit protection

Key Features

• 5.7-kV RMS single channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C6Functional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121 V pk33-V maximum output drive voltage (VDD-VEE)±10-A drive strength and split output150-V/ns minimum CMTI270-ns response time fast overcurrent protectionExternal active Miller clamp900-mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENRejects <40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°C5.7-kV RMS single channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C6Functional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121 V pk33-V maximum output drive voltage (VDD-VEE)±10-A drive strength and split output150-V/ns minimum CMTI270-ns response time fast overcurrent protectionExternal active Miller clamp900-mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENRejects <40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°C

Description

The UCC21738-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10-A peak source and sink currents. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common-mode transient immunity (CMTI). The UCC21738-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. The UCC21738-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10-A peak source and sink currents. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common-mode transient immunity (CMTI). The UCC21738-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.