Beta
⌘K
DIODE MODULE GP 800V 500A 3TOWER
| Part | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Reverse Leakage @ Vr | Speed | Speed | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | 150 °C | -55 °C | Chassis Mount | Three Tower | 500 A | 1.2 V | 800 V | Three Tower | 25 µA | Standard Recovery >500ns | 200 mA | 1 Pair Common Cathode |