TK31N60 Series

Catalog

MOSFET N CH 600V 30.8A TO247

Part	Operating Temperature	FET Type	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK31N60W,S1VF	150 °C	N-Channel	Through Hole	30 V	30.8 A	10 V	MOSFET (Metal Oxide)	TO-247-3	88 mOhm	3.7 V	3000 pF	86 nC	600 V	230 W	TO-247
Toshiba Semiconductor and Storage TK31N60W5,S1VF	150 °C	N-Channel	Through Hole	30 V	30.8 A	10 V	MOSFET (Metal Oxide)	TO-247-3	99 mOhm	4.5 V	3000 pF		600 V	230 W	TO-247	105 nC